Improved Stability of 4H Sic-MOS Devices after Phosphorous Passivation with Etching Process

Characterization of Large Area 4H-SiC and 6H-SiC Capacitive Devices

SiC based capacitive devices have the potential to operate in high temperature, chemically corrosive environments provided that the electrical integrity of the gate oxide and metallization can be maintained in these environments. We report on the performance of large area, up to 8 x 10 -3 cm, field-effect capacitive sensors fabricated on both the 4H and 6H polytypes at 600°C. Large area capacit...

SiC Field-Effect Devices Operating at High Temperature

Field-effect devices based on SiC metal-oxide-semiconductor (MOS) structures are attractive for electronic and sensing applications above 250°C. The MOS device operation in chemically corrosive, high-temperature environments places stringent demands on the stability of the insulating dielectric and the constituent interfaces within the structure. The primary mode of oxide breakdown under these ...

Characterization of Dielectric Layers for Passivation of 4H-SiC Devices

Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle

We grew epitaxial layers on 4H-silicon carbide (SiC) Si-face substrates with a 1° off-angle. The suppression of 3C-inclusion formation during growth at a high C/Si ratio was investigated, because a growth technique with a high C/Si ratio is needed to decrease residual nitrogen incorporation. 3C inclusions were generated both at the interface between the substrate and epitaxial layer, and during...

High-responsivity SiC Ultraviolet Photodetectors with SiO2 and Al2O3 Films

Silicon carbide (SiC) has shown considerable potential for ultraviolet (UV) photode‐ tectors due to its properties such as wide band gap (3.26 eV for 4H-SiC), high break down electric field and high thermal stability. 4H-SiC-based UV photodetectors such as Schottky, metal-semiconductor-metal (MSM), metal-insulator-semiconductor (MIS) and avalanche have been presenting excellent performance for ...